Semiconductor memory device with stacked capacitor above bit lin

Details Semiconductor memory device with stacked capacitor above bit lin Semiconductor memory device with stacked capacitor above bit lin

1994-01-26

1995-04-11

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 2968

Patent

active

054061032

ABSTRACT:
After a word line is formed on a semiconductor substrate, a side-wall insulating film is formed on the side faces of the word line. Subsequently, a first insulating film is deposited thereon. The resulting first insulating film is formed with an opening for a bit line, through which a bit line having an on-bit-line insulating film on its top surface is formed. Thereafter, a second insulating film is deposited thereon. An opening for a charge-storage electrode is then formed in the first and second insulating film by removing, by a specified thickness, the portions of the first insulating film, on-bit-line insulating film, and second insulating film lying in a memory cell array region, followed by the deposition of a charge-storage electrode through the opening for a charge-storage electrode.

REFERENCES:
patent: 5104822 (1992-04-01), Butler
patent: 5200635 (1993-04-01), Kaga et al.

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