Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-11-30
1995-04-11
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 427492, 427493, 427508, 427551, H01L 2100
Patent
active
054054923
ABSTRACT:
A multi-switch processing methodology and a multi-channel time-division plasma chopping device (10) for in-situ plasma-assisted semiconductor wafer processing associated with a plasma and/or photochemical processing equipment. The device (10) comprises a main transfer channel (72) associated with the processing reactor for transferring process gas and activated plasma mixtures into the reactor. A plurality of gas discharge channels (18, 22, 26, and 30) associate with the main transfer channel (72) for independently directing various gases and activated plasma combinations to main transfer channel (72). Process excitation sources (16, 20, 24 and 28) associate with at least one of said gas discharge or activation channels to independently and selectively activate process gases and to control gas activation and flow from the discharge channels to the main transfer channel (72). The method of the present invention performs multi-channel time-division plasma chopping by independently and selectively generating plasma or activated species using a plurality of remote plasma generation process energy sources (16, 20, 24, and 28) associated with the semiconductor wafer fabrication reactor.
REFERENCES:
patent: 4668337 (1987-05-01), Sekine et al.
patent: 4919077 (1990-04-01), Oda et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 4943345 (1990-07-01), Asmussen et al.
patent: 4971832 (1990-11-01), Arai et al.
patent: 4985114 (1991-01-01), Okudaira et al.
patent: 4988533 (1991-01-01), Freeman et al.
patent: 4989544 (1991-02-01), Yoshikawa
patent: 4993361 (1991-02-01), Unvala
patent: 5262610 (1993-11-01), Huang et al.
patent: 5273609 (1993-12-01), Moslehi
K. Tsujimoto et al., "A New Side Wall Protection Technique in Microwave Plasma Etching Using a Chopping Method", Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 229-232.
Breneman R. Bruce
Donaldson Richard L.
Goudreau George
Kesterson James C.
Matsil Ira S.
LandOfFree
Method and apparatus for time-division plasma chopping in a mult does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for time-division plasma chopping in a mult, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for time-division plasma chopping in a mult will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1536238