Faraday cup assembly for a semiconductor ion-implanting apparatu

Details Faraday cup assembly for a semiconductor ion-implanting apparatu Faraday cup assembly for a semiconductor ion-implanting apparatu

1996-12-26

1998-04-28

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250397, H01J 37317

Patent

active

057448124

ABSTRACT:
A Faraday cup assembly of a semiconductor ion-implanting apparatus is installed adjacent to a disc upon which a wafer can be mounted for performing an ion implantation. A micro-discharge is prevented because the Faraday cup has an inner wall covered by a conductive thin film or has a discharge tag of a predetermined size embedded in its inner wall. An ion implanting process utilizing such an apparatus ensures that contamination and quality inferiority of the wafer are prevented by preventing the build up of an insulating layer of carbon impurities on the inner wall of the Faraday cup assembly.

REFERENCES:
patent: 5144147 (1992-09-01), Shiozaki et al.
patent: 5343047 (1994-08-01), Ono et al.
patent: 5455426 (1995-10-01), Forgey et al.

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