Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-07-12
1993-04-20
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257603, 257 49, H01L 2978, H01L 2904, H01L 2990
Patent
active
052049884
ABSTRACT:
A MOS semiconductor device having a surge protecting circuit comprising a semiconductor substrate having a major surface, a plurality of electrodes overlying the major surface, a MOS circuit in the major surface, and a bidirectional semiconductor surge absorber coupled between the gate of the MOS circuit and a reference electrode contacting the major surface of the substrate. In another embodiment, the MOS semiconductor device further comprises a bidirectional Zener diode connected in series with the bidirectional semiconductor surge absorber.
REFERENCES:
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 5012317 (1991-04-01), Rountre
patent: 5025298 (1991-06-01), Fay et al.
patent: 5027251 (1991-06-01), Hirota et al.
patent: 5077591 (1991-12-01), Chen et al.
Fuji Electic Co., Ltd.
Munson Gene M.
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