Method of manufacturing low power loss semiconductor device

Details Method of manufacturing low power loss semiconductor device Method of manufacturing low power loss semiconductor device

1975-03-21

1976-07-06

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204298, 357 15, 427 38, 427 84, 118 491, C23C 1500, H01L 2948

Patent

active

039680193

ABSTRACT:
By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.

REFERENCES:
patent: 3451912 (1969-06-01), D'Hevrle
patent: 3832232 (1974-08-01), Sohlbrand
patent: 3855612 (1974-12-01), Rosvold
D. M. Mattox, "Fundamentals of Ion Plating", J. Vac. Sci. Technol. vol. 10, no. 1, pp. 47-52, (1973).
R. T. Johnson, Jr. et al., "Resistive Properties of Indium & Indium-Galuum Contacts to CdS", Solid State Elect., vol. 11, pp. 1015-1020. (1968).
"Sputtering & Ion Plating", NASA Special Pub., SP-5111, (1972).

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