Method for manufacturing a semiconductor field effort transistor

Details Method for manufacturing a semiconductor field effort transistor Method for manufacturing a semiconductor field effort transistor

1975-06-25

1976-07-06

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 148188, 148175, 204 15, 29571, 357 23, 357 67, H01L 734

Patent

active

039679810

ABSTRACT:
A method of manufacturing a metal, insulator, semiconductor type field effect transistor (MISFET) is disclosed by which a device is obtained having greatly improved reliability and containing multi-layered wiring. Only three photo-mask processes are used and the requirement for precision mask aligning is eliminated.

REFERENCES:
patent: 3445732 (1969-05-01), Janning
patent: 3541676 (1970-11-01), Brown
patent: 3646665 (1972-03-01), Kim
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3696276 (1972-10-01), Boland

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