Dry etch of phosphosilicate glass with selectivity to undoped ox

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Other Related Categories

156643, 156644, 156646, 156651, 156653, 156657, 1566591, 156663, 20419237, 252 791, 357 71, 434228, 434240, 434192, B44C 122, C03C 1500, C03C 2506, C23F 102

Type

Patent

Status

active

Patent number

048070165

Description

ABSTRACT:
An etchant of PSG (14) or BPSG with high selectivity to substantially undoped oxide (12) includes a fluorine-liberating compound and a fluorine-scavenging compound. The fluorine-liberating compound is preferably a perfluorinated inorganic compound, and the fluorine-scavenging compound is preferably a hydrogen-liberating compound such as hydrogen. A particularly preferred inorganic fluorine-liberating compound is nitrogen trifluoride. In an exemplary embodiment, etch rate ratios of PSG to undoped oxide as high as 11 to 1 were obtained.

REFERENCES:
patent: 3700508 (1972-10-01), Keen
patent: 4420503 (1983-12-01), Leung et al.
patent: 4535528 (1985-08-01), Chen et al.
patent: 4634494 (1987-01-01), Taji et al.
patent: 4654112 (1987-03-01), Douglas et al.

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