Method for performing in-situ etch of a CVD chamber

Details Method for performing in-situ etch of a CVD chamber Method for performing in-situ etch of a CVD chamber

1991-11-18

1993-04-20

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118715, 118724, 118723, H01L 2100

Patent

active

052039560

ABSTRACT:
During the cleaning of CVD chamber walls with an etch gas of NF.sub.3, the reaction chamber walls are heated to above 65.degree. C. while maintaining a relatively low chamber pressure during etching of the chamber with NF.sub.3. Any reaction of the NF.sub.3 with the quartz (SiO.sub.2) walls of the chamber, and with any reaction by-products remaining in the chamber, will not condense on the walls of the chamber, since, at this relatively high temperature, these reaction products will be volatile and will be purged away with the NF.sub.3.

REFERENCES:
patent: 4595453 (1986-06-01), Yamazaki et al.
patent: 4653428 (1987-03-01), Wilson et al.
patent: 4709655 (1987-12-01), Van Mastrigt
patent: 4749440 (1988-06-01), Blockwood et al.
patent: 4786352 (1988-11-01), Benzing
patent: 4795880 (1989-01-01), Hayes et al.
patent: 4811684 (1989-03-01), Tashiro et al.
patent: 4816113 (1989-03-01), Yamazaki
"Perry's Handbook of Chemical Engineering", 5th ed., pp. 3-20, .RTM.1973, ISBN: 0-07-049478-9.

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