Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-02-12
1999-09-14
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438635, 438680, 438681, H01L 2144
Patent
active
059536349
ABSTRACT:
A method of manufacturing a semiconductor device comprising the steps of, forming a diffusion-preventing thin film on a substrate, performing a first vapor deposition by supplying a source gas comprising a copper-containing organometallic compound and an oxidizing gas over the diffusion-preventing thin film thereby to allow a first conductive thin film containing copper as a main component and a trace of oxygen to be grown through a chemical vapor deposition, performing a second vapor deposition by supplying the source gas without supplying the oxidizing gas thereby to allow a second conductive thin film mainly containing copper to be grown through a chemical vapor deposition, and heat-treating the first and second conductive thin films at a temperature which is higher than those employed in the first and second vapor depositions.
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Kajita Akihiro
Kaneko Hisashi
Berry Renee R.
Bowers Charles
Kabushiki Kaisha Toshiba
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