Method for manufacturing semiconductor device comprising a silic

Details Method for manufacturing semiconductor device comprising a silic Method for manufacturing semiconductor device comprising a silic

1997-07-08

1999-09-14

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438664, 438909, H01L 2128

Patent

active

059536322

ABSTRACT:
There is herein disclosed a self-align-silicide formation technique which can be applied to miniaturized semiconductor elements. Heat treatment steps for silicidation of a high-melting metal film are two steps of a first heat treatment under an atmosphere containing no nitrogen and a second heat treatment under an atmosphere containing nitrogen. The first heat treatment is carried out under the atmosphere containing no nitrogen, whereby the nitriding of titanium can be restrained. In consequence, the thin silicide film can be formed in a self align state.

REFERENCES:
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4822753 (1989-04-01), Pinchovski et al.
patent: 5399526 (1995-03-01), Sumi
patent: 5573961 (1996-11-01), Hsu et al.
Tsukamoto, K., et al., "Self-Aligned Titanium silicidation of submicron MOS devices by rapid thermal annelaing", IEDM Tech. Digest, Dec. 1984, pp. 130-133.

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