Semiconductor device containing a silicon-rich layer

Details Semiconductor device containing a silicon-rich layer Semiconductor device containing a silicon-rich layer

1996-07-16

1999-01-12

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257363, 257379, 257904, H01L 2701, H01L 2712, H01L 2994

Patent

active

058594582

ABSTRACT:
A semiconductor device having a controlled resistance value within a predetermined range. The semiconductor device includes a substrate and an oxide layer provided above the substrate. There is also included a first dielectric layer that is silicon-rich above the oxide layer. There is further included a second dielectric layer above the silicon-rich layer.

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