Field effect transistor with a shaped gate electrode

Details Field effect transistor with a shaped gate electrode Field effect transistor with a shaped gate electrode

1992-12-01

1998-11-10

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257412, 257413, 257755, 257756, H01L 21336, H01L 2978, H01L 2943

Patent

active

058348174

ABSTRACT:
A field effect transistor comprises a semiconductor substrate having a main surface and a predetermined impurity concentration of a first conductivity type, impurity layers of a second conductivity type formed spaced apart at the main surface of the semiconductor substrate, and a shaped conductive layer serving as a gate electrode. The impurity layers constitute source.multidot.drain regions, and a region between the impurity layers defines a channel region in the main surface. The shaped conductive layer is formed on the channel region with an insulating film therebetween. The shaped conductive layer has an upper portion and a lower portion wherein the upper portion is longer than the lower portion and the length of the lower portion adjacent the insulating film is substantially equal to or shorter than the length of the channel region at the main surface. Additionally, the upper and lower portions of the shaped conductive layer are formed of the same base composition.

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