Semiconductor integrated circuit

Details Semiconductor integrated circuit Semiconductor integrated circuit

1995-06-02

1998-11-10

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257379, 257577, 257557, 257566, H01L 2970

Patent

active

058348140

ABSTRACT:
A current mirror circuit comprises first and second lateral-type bipolar transistors having first and second conductive films each formed via an insulation film, on the portion of the surface of a base region between an emitter region and a collector region. The first and second emitter regions and the first and second collector regions formed in the surface region of the base region separately from each other. A diode is used as a bias circuit. The diode applies a bias voltage corresponding to the output current of the first transistor, that is, the reference current, to the first and second conductive films of the first and second transistors, so that the width of the channel formed in a base region is changed in accordance with the reference current, and therefore the current amplification rate of each transistor can be maintained at a high value even if a large operation current is supplied.

REFERENCES:
patent: 4929884 (1990-05-01), Bird et al.
patent: 5081517 (1992-01-01), Contiero et al.
patent: 5155385 (1992-10-01), Gotoh et al.
patent: 5444362 (1995-08-01), Chung et al.
patent: 5572114 (1996-11-01), Ichimaru

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