MIS transistor semiconductor device

Details MIS transistor semiconductor device MIS transistor semiconductor device

1995-12-07

1998-11-10

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257333, 257335, 257334, 257326, H01L 2976, H01L 2994

Patent

active

058348093

ABSTRACT:
A MIS transistor comprises a semiconductor substrate having a first conductivity type, a source region and a drain region disposed in the semiconductor substrate in spaced-apart relation from one another and having a second conductivity type, and an insulating film disposed on the surface of the semiconductor substrate. A gate electrode is disposed on the insulating film between the source region and the drain region. A diffused region having the first conductivity type is disposed in the semiconductor substrate and in contact with the source region. An oxide film is disposed on the diffused region.

REFERENCES:
patent: 5146291 (1992-09-01), Watabe et al.
patent: 5168335 (1992-12-01), D'Arrigo et al.

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