Ohmic contacts to p-type mercury cadmium telluride

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 65, 357 67, 357 68, 357 71, H01L 29161, H01L 2348, H01L 2946, H01L 2962

Patent

active

040005089

ABSTRACT:
Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

REFERENCES:
patent: 3214654 (1965-10-01), Armstrong et al.
patent: 3432729 (1969-03-01), Dyre
patent: 3530014 (1970-09-01), Antell
patent: 3743553 (1973-07-01), Scott
patent: 3767482 (1973-10-01), Kock et al.
patent: 3779803 (1973-12-01), Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ohmic contacts to p-type mercury cadmium telluride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ohmic contacts to p-type mercury cadmium telluride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ohmic contacts to p-type mercury cadmium telluride will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-151786

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.