Semiconductor memory device such as a DRAM capable of holding da

Details Semiconductor memory device such as a DRAM capable of holding da Semiconductor memory device such as a DRAM capable of holding da

1997-04-21

1999-09-14

Nelms, David

Static information storage and retrieval

Systems using particular element

Capacitors

365227, G11C 1124

Patent

active

059532467

ABSTRACT:
A semiconductor memory device comprises a plurality of word lines, a plurality of bit lines intersecting the word lines, and memory cells selectively arranged at intersections of the word lines and the bit lines, and each consisting of a transistor and a capacitor, the transistor having a gate thereof connected to a corresponding one of the word lines, a drain thereof connected to a corresponding one of the bit lines, and a source thereof connected to an end of the capacitor and serving as a memory node, the capacitor having another end thereof connected to a plate electrode. In the semiconductor memory device, in an active mode assumed when a power supply is in an on state, that transistor of a memory cell which is connected to a selected one of the word lines is turned on, and those transistors of the other memory cells which are connected to non-selected word lines are in an off state. Further, in a standby mode assumed when the power supply is in the on state, when the power supply is in an off state, and when the power supply is turned on and off, the transistors of all the memory cells are in an off state.

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T. Tanigawa, et al. "Enhancement of Data Retention Time for Giga-Bit DRAMs Using Simox Technology", 1994 Symposium on VLSI Technology Digest of Technical Papers, 1994, pp. 37-38.
Hiroyuki Yamauchi, et al. "FA 14.1: A Sub-0.5.mu. A/MB Data-Retention DRAM", 1995 IEEE International Solid-State Circuits Conference, ISSCC, 1995, pp. 244-245.
Richard Womack, et al. "FAM 16.3: A 16kb Ferroelectric Nonvolatile Memory with a Bit Parallel Architecture", IEEE International Solid State Circuits Conference, ISSCC, 1989, pp. 242-243.

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