Method of manufacturing semiconductor device having a multilayer

Details Method of manufacturing semiconductor device having a multilayer Method of manufacturing semiconductor device having a multilayer

1996-04-12

1998-11-10

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438620, 438629, 438641, 438648, 438677, 438655, H01L 21283

Patent

active

058343679

ABSTRACT:
In a method of manufacturing a semiconductor device having a multilayer wiring structure, it has at least two underlying layers having different etching conditions. Firstly, the native oxide film formed on one of the underlying layers, or a barrier metal layer, is etched out under etching conditions suitable for the barrier metal layer. Then, the surface of the barrier metal layer is capped with a plugging material having etching conditions similar to or substantially the same as those of the other one of the underlying layers, or a lower wiring layer. Subsequently, the native oxide film and the etching by-product formed on the lower wiring layer are etched out under etching conditions suitable for the lower wiring layer. Thereafter, contact holes for the two underlying layers are buried with a conductive substance to establish electric connection with their respective upper conductive layers. With the above described steps, the entire manufacturing process is significantly simplified and the time required for burying the contact holes is greatly reduced without remarkably increasing the contact resistance between the barrier metal layer and the lower wiring layer and the respective buried conductive substances.

REFERENCES:
patent: 5192713 (1993-03-01), Harada
patent: 5476814 (1995-12-01), Ohshima et al.
patent: 5563097 (1996-10-01), Lee

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device having a multilayer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device having a multilayer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having a multilayer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516290