Method of forming an isolation region in a semiconductor substra

Details Method of forming an isolation region in a semiconductor substra Method of forming an isolation region in a semiconductor substra

1997-08-29

1998-11-10

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438427, 438444, 438445, 148DIG50, H01L 2176

Patent

active

058343598

ABSTRACT:
A method for forming an isolation region in a semiconductor substrate is disclosed. The present invention includes forming an insulating layer on the semiconductor substrate, and then forming a dielectric layer on the insulating layer. After patterning to etch portions of the dielectric layer, the insulating layer and the semiconductor substrate are etched using the patterned dielectric layer as a mask, thereby forming a trench in the semiconductor substrate. Next, a first silicon oxide layer is formed over the semiconductor substrate, and the first silicon oxide layer is then anisotropically etched to form a spacer on the sidewalls of the trench. Thereafter, the semiconductor substrate is thermally oxidized to form a field oxide region over the semiconductor substrate, and a second silicon oxide layer is then formed over the field oxide region. Finally, the second silicon oxide layer is etched back until surface of the dielectric layer is exposed.

REFERENCES:
patent: 4842675 (1989-06-01), Chapman et al.
patent: 5470783 (1995-11-01), Chiu et al.
patent: 5498566 (1996-03-01), Lee
patent: 5679602 (1997-10-01), Lie et al.
patent: 5731221 (1998-03-01), Kwon

Affiliated with

Also associated with

Rating

Method of forming an isolation region in a semiconductor substra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming an isolation region in a semiconductor substra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming an isolation region in a semiconductor substra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1516238