Process of depositing a layer of material on a wafer with suscep

Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4272481, 427314, C23C 1600

Patent

active

058340599

ABSTRACT:
The present disclosure is directed to a process of depositing a layer of a material on a wafer, which comprises depositing a layer of the same material to be deposited on the wafer on the back surface of a susceptor.

REFERENCES:
patent: 4290385 (1981-09-01), Nakanisi et al.
patent: 4424096 (1984-01-01), Kumagai
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 5075256 (1991-12-01), Wang et al.
patent: 5098198 (1992-03-01), Nulman et al.
patent: 5108792 (1992-04-01), Anderson et al.
patent: 5217755 (1993-06-01), Thebault et al.
patent: 5226968 (1993-07-01), Ohmi et al.
patent: 5261960 (1993-11-01), Ozias
patent: 5269847 (1993-12-01), Anderson et al.
patent: 5510297 (1996-04-01), Telford et al.
patent: 5599397 (1997-02-01), Anderson et al.
patent: 5645646 (1997-07-01), Beinglass et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process of depositing a layer of material on a wafer with suscep does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of depositing a layer of material on a wafer with suscep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of depositing a layer of material on a wafer with suscep will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1514497

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.