Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1993-08-24
1996-01-23
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365102, 365117, 365149, 36518901, G11C 1122
Patent
active
054870291
ABSTRACT:
There are provided a plurality of ferroelectric capacitors each of which having one of a pair of electrodes thereof connected with one terminal of a switch element which has the control terminal thereof connected with a first address selecting line. Second address selecting lines are respectively connected with the other electrodes of the ferroelectric capacitors to construct a unit memory circuit. When the switch element is turned ON by the first address selecting line, one of the second address selecting lines is brought into a selecting state to feed such a voltage as to polarize the ferroelectric capacitors. The remaining address selecting lines are set to an unselect potential so that the voltage to be applied to the unselected ferroelectric capacitors coupled to the remaining address selecting lines may be about one half as high as that applied to the selected ferroelectric capacitor. When the switch element is turned ON by the first address selecting line, the second address selecting lines are fed with such an unselect potential as to reduce the voltage to be applied to the ferroelectric capacitors substantially to zero. The stress to the ferroelectric capacitors of the unit memory circuit corresponding to the unselected switch element can be reduced because no voltage is applied to the ferroelectric capacitors.
REFERENCES:
patent: 3579208 (1971-05-01), Bartlett
patent: 4169258 (1979-09-01), Tannas, Jr.
patent: 4360896 (1982-11-01), Brody
patent: 4707897 (1987-11-01), Rohrer et al.
patent: 4809225 (1989-02-01), Dimmler et al.
patent: 4853893 (1989-08-01), Eaton, Jr. et al.
patent: 4873455 (1989-10-01), de Chambost et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4888733 (1989-12-01), Mobley
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 4918654 (1990-04-01), Eaton, Jr. et al.
patent: 4962322 (1990-10-01), Chapman
patent: 5029128 (1991-07-01), Toda
patent: 5031143 (1991-07-01), Jaffe
patent: 5031144 (1991-07-01), Persky
patent: 5038323 (1991-08-01), Schwee
patent: 5060191 (1991-10-01), Nagasaki et al.
patent: 5063539 (1991-11-01), Rallapalli
patent: 5086412 (1992-02-01), Jaffe et al.
patent: 5109357 (1992-04-01), Eaton, Jr.
patent: 5121353 (1992-06-01), Natori
IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, "An Experimental 512-bit Nonvolatile Memory with Ferroelectric Storage Cell", pp. 1171-1175.
IEEE 1990 Symposium on VLSI Technology, "A Ferroelectric DRAM Cell for High Density NVRAMS", pp. 15-16.
IEEE 1987 IEDM, "A Non-Volatile Memory Cell Based on Ferroelectric Storage Capacitors", pp. 850-851.
Nikkei Microdevises, Jun. 1992, pp. 78-83.
Science, vol. 246, 1989, "Ferroelectric Memories", pp. 1400-1405.
Integrated Ferroelectrics, 1992, vol. 1, "Fatigue and Aging in Ferroelectric PbZr.sub.0.2 Ti.sub.0.8 O.sub.3 /YBa.sub.2 Cu.sub.3 O.sub.7 Heterostructures", pp. 1-15.
IEEE 1990 IEDM, "Endurance Properties of Ferroelectric PZT Thin Films", pp. 417-420.
Semiconductor Word, Dec. 1991, pp. 122-125.
Hitachi , Ltd.
Niranjan F.
Popek Joseph A.
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