High frequency semiconductor device

Details High frequency semiconductor device High frequency semiconductor device

1995-05-18

1996-07-02

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257701, 257703, 257704, 333247, H01L 23053, H01L 2334, H01L 2312, H01P 100

Patent

active

055325149

ABSTRACT:
The semiconductor device of the present invention includes a semiconductor substrate on which an integrated circuit equipped with a connection electrode is formed on its main surface. At the center of the main surface, a substrate mounting portion having a cavity portion in which the semiconductor substrate is contained, is provided. At the periphery of the main surface of the substrate mounting portion, a plurality of leads are arranged and fixed to the periphery of the semiconductor substrate mounted in the cavity portion so that ends of the leads oppose each other. The plurality of leads include leads selected as power source lines. The connection electrode of the main surface of the semiconductor substrate is electrically connected to one of the ends of the leads via a bonding wire. A cap for covering at least the semiconductor substrate, the bonding wire and the ends of the leads is adhered to the substrate mounting portion.

REFERENCES:
patent: 5397918 (1995-03-01), Yokochi et al.

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