Semiconductor device with LDD structure

Details Semiconductor device with LDD structure Semiconductor device with LDD structure

1995-05-22

1996-07-02

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257404, 257408, 257607, H01L 2976, H01L 2994

Patent

active

055325084

ABSTRACT:
A method for manufacturing a semiconductor device including steps of forming a gate oxide film and a gate electrode on a semiconductor substrate; implanting impurity ions of the same conductivity as the substrate in an oblique direction at a first tilt angle to the normal line of the substrate and with a first acceleration voltage and dose, while rotating the substrate about the normal line thereof; implanting impurities of the same conductivity as the substrate in the same manner except for using a tilt angle to the normal line which is greater and a dose which is smaller than that of the first tilt angle and dose; and forming source and drain regions by implanting impurity ions of the opposite conductivity to the substrate into the substrate, followed by performing a thermal treatment.

REFERENCES:
patent: Re32800 (1988-12-01), Han et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 5147811 (1992-09-01), Sakagami
patent: 5218221 (1993-06-01), Okumura
patent: 5320974 (1994-06-01), Hori et al.

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