Trench EEPROM with tunnel oxide in trench

Details Trench EEPROM with tunnel oxide in trench Trench EEPROM with tunnel oxide in trench

1995-05-22

1996-01-23

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257330, H01L 27115

Patent

active

054867142

ABSTRACT:
A floating gate EPROM has surface source and drain regions, with a trench between the source and drain regions containing the floating and control gates. A thin tunneling oxide layer is located at the bottom of the trench and on the sidewalls of the trench adjacent the source and drain regions, with thicker gate oxide elsewhere in the trench.

REFERENCES:
patent: 4975384 (1990-12-01), Baglee
patent: 5045490 (1991-09-01), Esquire et al.
patent: 5049515 (1991-09-01), Tzeng
patent: 5071782 (1991-12-01), Mori
patent: 5141886 (1992-08-01), Mori
patent: 5180680 (1993-01-01), Yang
patent: 5281548 (1994-01-01), Prell
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5338953 (1994-08-01), Wake

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