Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-26
1997-06-24
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257413, 257755, H01L 2976, H01L 2994, H01L 31062, H01L 2348
Patent
active
056419830
ABSTRACT:
In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. At least one of the gate electrodes and the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain impurities consisting of at least one of a III group dopant and a V group dopant in a total concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.
REFERENCES:
patent: 4812889 (1989-03-01), Kakumu
patent: 5218232 (1993-06-01), Yuzurihara et al.
patent: 5355010 (1994-10-01), Fujii et al.
Kato et al, "Gate Oxide Degradation by Anomalous Oxidation of Mosi.sub.2 on Polycrystalline Silicon Implanted with High Doses of Dopants," Oral Presentation--Dec. 11, 1992.
Kato Juri
Tanaka Kazuo
Loke Steven H.
Seiko Epson Corporation
LandOfFree
Semiconductor device having a gate electrode having a low dopant does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a gate electrode having a low dopant, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a gate electrode having a low dopant will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-150604