Semiconductor device having CMOS circuit and bipolar circuit mix

Details Semiconductor device having CMOS circuit and bipolar circuit mix Semiconductor device having CMOS circuit and bipolar circuit mix

1994-10-31

1996-10-01

Westin, Edward P.

Electronic digital logic circuitry

Interface

Logic level shifting

326 18, 326 64, H03K 190175, H03K 1908

Patent

active

055613888

ABSTRACT:
In a semiconductor device where a CMOS circuit and a bipolar circuit are mixed, the bipolar circuit is operated between a first power supply voltage and a second power supply voltage, and the CMOS circuit and a level conversion circuit between a CMOS level and a bipolar level are operated between the first power supply voltage and a third power supply voltage. The third power supply voltage is between the first and second power supply voltages.

REFERENCES:
patent: 4453095 (1984-06-01), Wrathall
patent: 5068551 (1991-11-01), Bosnyak
patent: 5101125 (1992-03-01), Hara et al.
patent: 5132573 (1992-07-01), Tsuru et al.
IBM Technical Disclosure Bulletin, Level-Shifted Emitter-Follower BIMOS Circuits, vol. 34, No. 4A, Sep., 1991, pp. 142-144.
LaBuda et al., How BICMOS Fits Into an ECL Design Wescon/88 Conference Record, Nov. 1, 1988, pp. 11/1-11/7.
A. Denda et al., A 270 ps/24.000 Gate BiCMOS Gate Array, Proceedings of the IEEE 1989 Custom Integrated Circuits Conference, May 15-18, 1989, pp. 8.4.1-4.

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