DRAM system with simultaneous burst read and write

Electrical computers and digital processing systems: memory – Storage accessing and control – Access timing

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711169, 36518904, 36518905, G06F 1200

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06085300&

ABSTRACT:
A DRAM system is described that can prevent a substantial reduction in bandwidth with respect to a clock pulse frequency even when banks are accessed in no specific order. As a result, provided is a memory system constituted by DRAM whereby a seamless operation is assured not only for reading but also for writing.

REFERENCES:
Sunaga et al.; A Full Bit Prefetch Architecture for Synchronous DRAM's; IEEE Journal of Solid-State Circuits, vol. 30, No. 9, Sep. 1995, pp. 998-1005.
Sunaga; A Full Bit Prefetch DRAM Sensing Circuit; IEEE Journal of Solid-State circuits, vol. 31, No. 6, Jun. 1996, pp. 767-772.

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