Power device having high breakdown voltage and method of manufac

Details Power device having high breakdown voltage and method of manufac Power device having high breakdown voltage and method of manufac

1998-02-23

2000-07-04

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257329, 257566, 257567, 257652, H01L 2976, H01L 2994, H01L 31062, H01L 31113, H01L 31119

Patent

active

060842636

ABSTRACT:
The main characteristic feature of the invention is to prevent a leakage current from flowing when a planar type semiconductor device having a high breakdown voltage is reverse-biased. For example, a semiconductive film is formed on the surface of an n-type Si substrate between a second p-type base layer selectively formed on the surface of the Si substrate and a channel stop layer formed to surround the second p-type base layer at a predetermined interval. The dangling bond density of the semiconductive film is set at 1.25.times.1018 cm.sup.-3. With this structure, the discrete level in the band gap approach a continuum, and the time required to populate the trapping level in the semiconductive film with carriers is shortened.

REFERENCES:
patent: 4400716 (1983-08-01), Tani et al.
patent: 5410177 (1995-04-01), Harmel et al.

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