Semiconductor device having a catalyst enhanced crystallized lay

Details Semiconductor device having a catalyst enhanced crystallized lay Semiconductor device having a catalyst enhanced crystallized lay

1996-12-18

2000-07-04

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 50, 257 52, 257 57, 257 63, 257 65, 257 67, 257 64, 257 70, 257347, 257348, 257349, 257350, 257351, 257352, 257353, H01L 2976, H01L 31036

Patent

active

060842474

ABSTRACT:
Semiconductor devices such as thin-film transistors formed by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the silicon film. Islands, stripes, lines, or dots of nickel, iron, cobalt, or platinum, silicide, acetate, or nitrate of nickel, iron, cobalt, or platinum, film containing various salts, particles, or clusters containing at least one of nickel, iron, cobalt, and platinum are used as starting materials for crystallization. These materials are formed on or under the amorphous silicon film.

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