Semiconductor device having pull-up or pull-down resistance

Details Semiconductor device having pull-up or pull-down resistance Semiconductor device having pull-up or pull-down resistance

1996-09-23

1998-06-02

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257358, 257360, 257363, 257379, 257380, H01L 2362

Patent

active

057604479

ABSTRACT:
A semiconductor device includes a CMOSFET, including n-channel and p-channel MOSFETs. A terminal is connected to a node connecting the drains of the MOSFETs. A pull-up or pull-down resistor is connected between the terminal and a power source potential. The pull-up or pull-down resistor is composed of two serially-connected resistances. One of the two serially connected resistances is connected to the terminal and is formed of a resistance material that does not form a pn junction with a semiconductor substrate, and the other of the two resistances is formed of a diffusion layer of conduction type that forms a pn junction with the semiconductor substrate.

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Smelters et al; "Latchup Considerations In Standard Cell Cmos Design"; May 1986; pp. 104-108; IEEE International Symposium on Circuits and Systems, vol. 1.

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