Semiconductor device of a silicon on insulator metal-insulator t

Details Semiconductor device of a silicon on insulator metal-insulator t Semiconductor device of a silicon on insulator metal-insulator t

1995-09-29

1998-06-02

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257349, 257350, 257616, H01L 2701, H01L 2712, H01L 310392, H01L 31117

Patent

active

057604428

ABSTRACT:
A first silicon oxide layer serving as an insulation layer is formed on a p-type semiconductor substrate. An n.sup.+ -type source and drain regions are formed on the p-type substrate 110 with a spacing therebetween. A channel region is interposed between the source and drain regions. A second silicon oxide layer serving as a gate insulation layer is formed on the channel region. A gate terminal is formed on the second silicon oxide layer. High-concentration p-type regions are formed in the p-type semiconductor substrate under the source and drain regions, respectively.

REFERENCES:
patent: 5485030 (1996-01-01), Terashima
An Analysis of the Concave MOSFET, by Kenhi Natori et al, IEEE Transactions on Electron Devices, vol. Ed. 35, No. 4, Apr., 1978, pp. 448-456.
Operating Theory of MOS Transistor, by Hara et al, pp. 131-139, Kindai Kagakusya.

Affiliated with

Also associated with

Rating

Semiconductor device of a silicon on insulator metal-insulator t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device of a silicon on insulator metal-insulator t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device of a silicon on insulator metal-insulator t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1462891