Thin film strained layer ferroelectric capacitors

Details Thin film strained layer ferroelectric capacitors Thin film strained layer ferroelectric capacitors

1995-04-07

1998-06-02

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

3613215, H01L 27108

Patent

active

057604320

ABSTRACT:
A capacitor having a first electrode and a dielectric material epitaxially deposited on a surface of the electrode to form a dielectric layer on the electrode. The dielectric material forming the dielectric layer has induced strain in the layer sufficient to significantly improve the dielectric properties. A second electrode is placed on the dielectric layer.

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Yamaka et al., Structural, Ferroelectric, and Pyroelectric Properties of Highly c-axis Oriented Pb.sub.1-x Ca.sub.x TiO.sub.3 Thin Film Grown by Radio-Frequency Magnetron Sputtering, J. Vac. Sci. Technol. A, Sep./Oct. 1988.
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K. Iijima et al., "Preparation of ferroelectric BaTio.sub.3 thin films by activated rective evaporation", Applied Physics Letters, vol. 56, No. 6, pp. 527-529, Feb. 5, 1990.

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