Advanced CMOS isolation utilizing enhanced oxidation by light io

Details Advanced CMOS isolation utilizing enhanced oxidation by light io Advanced CMOS isolation utilizing enhanced oxidation by light io

1998-08-19

2000-01-11

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

438966, 438440, 438766, H01L 21762

Patent

active

060135573

ABSTRACT:
A method for forming field isolation regions in multilayer semiconductor devices comprises the steps of masking active regions of the substrate, forming porous silicon in the exposed field isolation regions, removing the mask and oxidizing the substrate. A light ion impurity implant is used to create pores in the substrate. Substrate oxidation proceeds by rapid thermal annealing because the increased surface area of the pores and the high reactivity of unsaturated bonds on these surfaces provides for enhanced oxidation.

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