Memory cell having a double gate field effect transistor and a m

Details Memory cell having a double gate field effect transistor and a m Memory cell having a double gate field effect transistor and a m

1982-08-09

1985-04-16

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365182, 365218, G11C 1140

Patent

active

045119961

ABSTRACT:
A memory cell comprises a double gate field effect transistor which exhibits source and drain regions located in a semiconductor body and two gate electrodes covering the semiconductor area between the source and drain regions, the gate electrodes being separated from the semiconductor body by a multilayer insulation. The first gate electrode is a memory gate, whereas inversion layers are produced with the second gate electrode given supply of a gate voltage, the inversion layers extending the source and drain regions in the direction towards the memory gate. The structure provides a surface-saving design of a selection element. The second gate electrode is employed for this purpose as the selection element and is connected to a selection line (word line). The invention finds application in very large scale integrated semiconductor memories.

REFERENCES:
patent: 4330850 (1982-05-01), Jacobs et al.

Affiliated with

Also associated with

Rating

Memory cell having a double gate field effect transistor and a m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Memory cell having a double gate field effect transistor and a m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Memory cell having a double gate field effect transistor and a m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1460459