Method of formation of an air gap within a semiconductor dielect

Details Method of formation of an air gap within a semiconductor dielect Method of formation of an air gap within a semiconductor dielect

1996-06-05

1998-06-02

Fourson, George R.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438422, H01L 21283

Patent

active

057599130

ABSTRACT:
A dielectric material is provided having air gaps which form during dielectric deposition between interconnects. The dielectric is deposited in interconnect-spaced geometries which have certain aspect ratios and which are exposed at the bottom of the geometries to a hygroscopic dielectric. During deposition, the dielectric is forced along the sidewall of the spaced interconnects as a result of moisture ougasing from the hygroscopic dielectric. Over a period of time, a keyhole occurs with pile up accumulation (or cusping) at the corners of the spaced interconnects. By decreasing the deposition temperature in a subsequent step, outgasing is minimized, and deposition over the keyhole and upon the hygroscopic dielectric takes place. Keyhole coverage results in an air gap which is surrounded on all sides by the fill dielectric. Air gap between interconnects helps reduce permittivity of the overall dielectric structure, resulting in a lessening of the interconnect line-to-line capacitance.

REFERENCES:
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5407860 (1995-04-01), Stoltz et al.

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