Resistless methods of fabricating FETs

Details Resistless methods of fabricating FETs Resistless methods of fabricating FETs

1997-01-02

1998-06-02

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

438172, 438572, 438690, H01L 21338

Patent

active

057598800

ABSTRACT:
A method of fabricating semiconductor devices including forming a plurality of layers of semiconductor material on the surface of a substrate, forming a mask without using a resist on the layers which can be disassociated in-situ, removing an unmasked portion of the layers to form a semiconductor device with a gate region and opposed exposed source and drain surfaces, selectively growing source and drain contact regions on the exposed source and drain surfaces respectively, the contact regions defining opposed sidewalls adjacent the gate region, disassociating the mask, forming sidewall spacers on the sidewalls, forming a metal contact on the source, drain and gate regions with the spacers preventing intercontact therebetween, and depositing a passivating layer over the semiconductor device, with all of the previous steps being performed in-situ in a modular equipment cluster.

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patent: 5514605 (1996-05-01), Asai et al.
Kramer et al, "Resistless High Resolution Optical Lithography on Silicon"; Appl. Phys. Lett. 67(20), Nov. 13, 1995.

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