Method of forming silicide film on silicon with oxygen concentra

Details Method of forming silicide film on silicon with oxygen concentra Method of forming silicide film on silicon with oxygen concentra

1996-10-25

1998-12-15

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438658, 438664, 438682, 438683, H01L 2128

Patent

active

058496343

ABSTRACT:
A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1.times.10.sup.18 cm.sup.3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.

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Byun et al, "TiN/TiSi2 Formation Using TiNx Layer and Its Feasabilities in ULSI", Extended Abstracts of the Aug. 1994 International Conferences on Solid State Devices and Material, pp. 640-642.
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