Layered silicon nitride deposition process

Details Layered silicon nitride deposition process Layered silicon nitride deposition process

1997-11-24

1999-11-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

438761, 438778, 438787, 438791, H01L 2131, H01L 21469

Patent

active

059814039

ABSTRACT:
A semiconductor device process for forming a multilayered nitride structure. The nitride is used as either isolation or as part of a dielectric structure. The deposition rate for the nitride is varied to form a multilayered structure with stress accommodation at the interface between sub-layers in the multilayer structure. In addition, the sub-layered structure reduces pin-holes and microcracks in the nitride film and improves the overall uniformity in thickness of the final nitride film.

REFERENCES:
patent: 4742020 (1988-05-01), Roy
patent: 5032545 (1991-07-01), Doan et al.
patent: 5132244 (1992-07-01), Roy
patent: 5153701 (1992-10-01), Roy
patent: 5756404 (1998-05-01), Friedenreich et al.

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