Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-10-01
1999-11-09
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438632, 438783, 438787, H01L 21316
Patent
active
059813733
ABSTRACT:
A method of manufacturing the semiconductor device comprises elements described below;
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patent: 5683940 (1997-11-01), Yahiro
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura
M. Matsuura et al., "Novel Self-planarizing CVD Oxide for Interlayer Dielectric Applications," IEEE IEDM, 1994, pp. 117-120.
Bowers Charles
Kabushiki Kaisha Toshiba
Whipple Matthew
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