Method of controlling oxygen content and distribution in grown s

Details Method of controlling oxygen content and distribution in grown s Method of controlling oxygen content and distribution in grown s

1982-07-09

1985-04-16

Lacey, David L.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156617SP, 156DIG64, 156618, C30B 1520

Patent

active

045114285

ABSTRACT:
An improved method of growing silicon crystals by the Czochralski method to obtain a desired oxygen concentration level with both axial and radial uniformity. A crucible is located within a heater to achieve a given temperature profile which is related to the oxygen concentration, and then raised and rotated at an increasing speed together with a high crystal rotation rate to achieve the uniformity.

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patent: 4239585 (1980-12-01), Kohl
T. C. Digges, Jr., A Solution for Meit-Level Control when Growing Czochralski Silicon Crystals in Hemispherical Quartz Crucibles, Feb. 1975 Solid State Technology, pp. 44-48.
W. N. Borle et al., Silicon Crystals Almost Free of Dislocations, Journal of Crystal Growth, No. 2 (1971), pp. 223-225.

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