SRAM with improved sensing circuit

Details SRAM with improved sensing circuit SRAM with improved sensing circuit

1983-08-31

1986-04-29

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Flip-flop

365190, 365207, 307530, G11C 1140

Patent

active

045861668

ABSTRACT:
A static random access memory wherein positive feedback is used in the bit line loads. The output of the first sense amplifier stage is fedback to the gates of depletion-made bit line load transistors, to provide positive feedback during the read or write operation. That is, since one of the complementary bit lines which the accessed memory cell is attempting to pull down sees a load impedance which gradually becomes higher and higher, the memory cell can pull down this bit line more rapidly. To accomplish this with stability, the first sense amplifier stage has less than unity open loop gain, and a succeeding sense amplifier stage is therefore used for further amplification.

REFERENCES:
patent: 4498154 (1985-02-01), Hoffmann

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