Transistor device with reduced hot carrier injection effects

Details Transistor device with reduced hot carrier injection effects Transistor device with reduced hot carrier injection effects

1996-05-24

1999-01-26

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257339, 257344, 257356, 257382, 257384, 257408, 257410, 438287, 438421, 438422, H01L 2976, H01L 2362, H01L 21336

Patent

active

058641602

ABSTRACT:
A MOS transistor includes a void space as part of the gate oxide layer on the drain end of the transistor. The void space replaces a region of the gate oxide layer so that no oxide is present for injection of hot carriers. The presence of the void space, preferably containing a vacuum, also reduces the total gate capacitance of the device. The void space is formed by chemical etching of the gate oxide layer and void space sealing during device manufacture.

REFERENCES:
patent: 5159416 (1992-10-01), Kudoh
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5369297 (1994-11-01), Kusunoki et al.
patent: 5536971 (1996-07-01), Oishi et al.
patent: 5648673 (1997-07-01), Yasuda
MacWilliams et al.; Improved Hot-Carrier Resistance with Fluorinated Gate Oxides; IEEE Electron Device Letter, vol. 11, No. 1, pp. 3-5. Jan. 1990.

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