Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-26
1999-01-26
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 29788
Patent
active
058641572
ABSTRACT:
A flash memory device that can be erased and programmed electrically, the flash memory device includes an array of transistor memory cell units each has N-doped source and drain regions formed in the device substrate. An N-doped buried channel is formed in the device substrate located between the source and drain regions. A P-doped floating gate is further formed substantially above the buried channel, and a control gate is formed on top of the floating gate. The different doping pattern in the buried channel and the floating gate establishes an increased programming bias voltage for the flash device when operating in its programming mode so that programming speed of the device is faster than conventional. The device can also be fabricated in smaller dimensions with improved reliability.
REFERENCES:
patent: 5677876 (1997-10-01), Tanaka
patent: 5751631 (1988-05-01), Liu et al.
Meier Stephen
United Microelectronics Corp.
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