Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1997-03-04

1999-01-26

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438636, 430318, H01L 214763

Patent

active

058638342

ABSTRACT:
A first insulating film is formed on a semiconductor substrate. A metal wire made of an aluminum alloy containing copper is formed on the first insulating film. An antireflection film is formed on the top face of the metal wire. On the region of the side face of the metal wire uncovered with an aluminum oxide film, there is formed a copper sulfide film, which is a sulfide film of copper. A second insulating film is formed over the metal wire formed with the antireflection film as well as the copper sulfide film and the first insulating film.

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