Liquid vapor deposition or etching method

Details Liquid vapor deposition or etching method Liquid vapor deposition or etching method

1997-06-19

1999-01-26

Bell, Janyce

Coating processes

Centrifugal force utilized

427304, 427305, 427306, 427337, 427377, 427345, B05D 312

Patent

active

058636030

ABSTRACT:
The present invention teaches electroless liquid vapor deposition/etching process for depositing on a reactive or non-reactive substrate surface or etching a film on a substrate surface in a bathless deposition apparatus during ULSI processing by the steps of: applying liquid chemical precursor solutions to the surface of the substrate, the liquid chemical precursor solutions are reactive to one another and enter the chamber of the inert atmosphere deposition apparatus separately; spinning the substrate during the application of the liquid chemical precursor solutions; and depositing or etching the film. The process may be implemented in inert atmosphere by enclosing the whole arrangement in a chamber and flowing inert gases such as Ar, He, and N.sub.2, etc.

REFERENCES:
patent: 2956900 (1960-10-01), Carlson
patent: 3672939 (1972-06-01), Miller
patent: 3983266 (1976-09-01), Bahls
patent: 4228201 (1980-10-01), Feldsfein
patent: 4894260 (1990-01-01), Kumasaka
patent: 5183795 (1993-02-01), Ting
F.A. Lowenheim "Modern Electroplating" John Wiley & Sons, 1974 p. 734 (no mo.).
"On the Textue of Electroless Copper Films"-J. Electrochem. S, Solid-State Science and Technology, vol. 135, No. 9, Sep. 1988, pp. 2304-2308.
"Selective Electroless Metal Deposition for Integrated Circuit Fabrication"-J. Electrochem. Soc., vol. 136, Feb. 1989, pp. 456-461.

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