Process for fabricating conductors used for integrated circuit c

Details Process for fabricating conductors used for integrated circuit c Process for fabricating conductors used for integrated circuit c

1990-06-12

1991-06-18

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156656, 1566591, 156664, 156665, 20419235, 252 791, 428209, 437187, 437245, 437228, B44C 122, C23F 102, H01L 21306

Patent

active

050247220

ABSTRACT:
A process for defining conductors on a integrated circuit substrate which includes selectively dry etching through a metal layer on the substrate using plasma reactants including conductor sidewall passivation gases such as silicon tetrabromide, SiBr.sub.4. This process is useful to form high quality silicon and nitrogen containing inorganic films on the sidewall surfaces of the conductors thus formed, and these films protect the conductors from lateral etching and undercutting and preserve their structural integrity. In a preferred embodiment of the invention, the metal layer or substrate is tungsten, W, and is masked directly with a photoresist polymer.

REFERENCES:
patent: 4521275 (1985-06-01), Purdes
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4713141 (1987-12-01), Tsang
patent: 4919748 (1990-04-01), Bredbenner
patent: 4948462 (1990-08-01), Rossen

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