Method for reducing foreign matter on a wafer etched in a reacti

Details Method for reducing foreign matter on a wafer etched in a reacti Method for reducing foreign matter on a wafer etched in a reacti

1991-08-21

1993-06-22

Simmons, David A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, B44C 122

Patent

active

052214257

ABSTRACT:
A system for reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber is disclosed. As a radio frequency voltage is applied within the etch chamber, the pressure within the etch chamber may be reduced to a base pressure. Also, the flow of gas into the etch chamber may be maintained. This may include minimizing the flow of high reactive gas into the etch chamber while maintaining the flow of low reactive gas therein. The system further includes deactivating the radio frequency voltage. Deactivating the radio frequency voltage may be accomplished by gradually reducing the voltage to a minimum voltage. The gradual reduction may be accomplished by incrementally reducing the voltage in a series of steps. If reactive ion etching occurs with magnetic enhancements, the magnetic field applied to the etch chamber may be deactivated, typically prior to the reduction of the radio frequency voltage.

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