Process for cleaning surface of semiconductor substrate

Details Process for cleaning surface of semiconductor substrate Process for cleaning surface of semiconductor substrate

1991-08-19

1993-06-22

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156656, 156657, 156662, 252 791, 252 793, 134 1, 134 2, 134 3, H01L 2100

Patent

active

052214230

ABSTRACT:
The surface of a semiconductor substrate is cleaned effectively by etching the surface by placing the substrate in a halogen containing atmosphere, irradiating the atmosphere and the semiconductor surface with ultraviolet rays, and wet solution cleaning of the formed reactant from the substrate surface.

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RCA Review, Jun. 1970, Werner Kern & David A. Puotinen, entitled "Cleaning Solutions Based on Hydrogen Peroxide for use in Silicon Semiconductor Technology," pp. 187-206.
A. C. Beyer et al., "Liquid HF Etching Without Contamination", IBM Technical Disclosure Bulletin, vol. 20, No. 5, Oct., 1977, pp. 1741-1742, New York, U.S.

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