In situ production of silicon crystals on substrate for use in s

Details In situ production of silicon crystals on substrate for use in s In situ production of silicon crystals on substrate for use in s

1982-12-06

1986-04-15

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427 86, C30B 2510

Patent

active

045825602

ABSTRACT:
An improved method is disclosed for growing directly on a substrate, crystals of silicon large enough to permit construction of an efficient solar cell therefrom.
The silicon is transported to a deposition zone together with a growth modifier selected from the class consisting of a Group IV metal, a Group IB metal, the halide of a Group IV metal, the halide of a Group IB metal, or a mixture thereof. The silicon may be in the form of a metal vapor, a silane, or one or more halosilanes.

REFERENCES:
patent: 3473974 (1969-10-01), Faust, Jr. et al.
patent: 4050905 (1977-09-01), Swinehart
patent: 4068020 (1978-01-01), Reuschel
patent: 4129463 (1978-12-01), Cleland et al.
patent: 4301323 (1981-11-01), Schink

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