Method of forming a contact landing pad

Details Method of forming a contact landing pad Method of forming a contact landing pad

1997-03-13

1998-12-29

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438629, 438625, 438637, 438639, 438647, 438649, 438396, 438253, H01L 218242

Patent

active

058541276

ABSTRACT:
Integrated circuitry and a method of forming a contact landing pad are described. The method includes, in one embodiment, providing a substrate having a plurality of components which are disposed in spaced relation to one another; forming a silicon plug spanning between two adjacent components; forming a refractory metal layer over the silicon plug and at least one of the components; reacting the silicon plug and the refractory metal layer to form a silicide layer on the silicon plug; and after forming the silicide layer removing unreacted refractory metal layer material from the substrate.

REFERENCES:
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patent: 5656529 (1997-08-01), Fukase
patent: 5688713 (1997-11-01), Linliu et al.
patent: 5700722 (1997-12-01), Sumi
patent: 5702979 (1997-12-01), Chan et al.
patent: 5706164 (1998-01-01), Jeng
patent: 5717250 (1994-08-01), Schuele
patent: 5728595 (1997-03-01), Fukase
patent: 5728627 (1998-03-01), Nam et al.
patent: 5744387 (1998-04-01), Tseng

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