Process and gas mixture for etching silicon dioxide and silicon

Details Process and gas mixture for etching silicon dioxide and silicon Process and gas mixture for etching silicon dioxide and silicon

1980-06-26

1982-04-13

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156653, 156657, 1566591, 156345, 204192E, 204298, 252 791, 427 39, H01L 21306, C03C 1500, C03C 2506, B44C 122

Patent

active

043246117

ABSTRACT:
Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.

REFERENCES:
patent: 3940506 (1976-02-01), Heinecke
patent: 4134817 (1979-01-01), Bourdon
patent: 4208241 (1980-06-01), Harshanger et al.
patent: 4211601 (1980-07-01), Mogab
J. Vac. Sci. Technol, vol. 16, No. 2, Mar./Apr. 1979, Plasma etching-A Discussion of Mechanisms by Coburn et al., pp. 391-403.
IBM Research Report, RJ 2327 (31269) 9/8/78, Some Chemical Aspects of the Fluorocarbon Plasma Etching of Silicon and Its Compounds by J. W. Coburn et al., pp. 1-31.
J. Appl. Phys. vol. 49, No. 7, Jul. 1978, Additions to CF4 Plasma by C. J. Mogab et al., pp. 3796-3803.
Research Disclosure, Sep. 1977, Sloped Polycrystalline etch by Anon, pp. 78-80.
IBM Technical Disclosure Bulletin, vol. 20, No. 4, Sep. 1977, Plasma Etching of SiO.sub.2 /Polysilicon Composite Film by H. A. Clark, p. 1386.
Solid State Technology, May 1976, A Survey of Plasma-Etching Processes by R. L. Bersin, pp. 31-36.

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